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| THNCF008MAA Datasheet, PDF (42/52 Pages) Toshiba Semiconductor – CompactFlash Card | |||
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Preliminary version
THNCFxxxMAA Series
DC Characteristics-1 (Ta=0 to +70°C, VCC = 3.3V±5%, 5V±10%)
Parameter
Symbol
Min
Typ Max Unit Test conditions
Input voltage
VIH
2.0
ï¼ VCC+0.3 V ï¼
VIL
-0.3
ï¼
0.6
V
Schmitt circuit
VT+
ï¼
2.1
ï¼
V VCC=3.3V
VT-
ï¼
1.2
ï¼
V
Output voltage (4mA)
VOH
2.4
ï¼
ï¼
V IOH=-4mA
VOL
ï¼
ï¼
0.4
V IOL=4mA
Input leakage current
ILI
ï¼
ï¼
1
μA ï¼
Output leakage current
ILO
ï¼
ï¼
1
μA VOUT=high impedance
Pull-up current (Resistivity) ï¼IPU
20/(165) 45/(73) 72/(45) μA(kΩ) VForce=3.3V
Pull-down current (Resistivity) ï¼IPD
-20/(1800) -48/(206) -72/(85) μA(kΩ) VForce=0V
Sleep/standby current
ISP1
ï¼
(0.2) (0.5) MA CMOS level
(control signal=VCC-0.2)
Sector read current
ICCR(DC)
ï¼
(25) (50) MA CMOS level
(control signal=VCC-0.2)
ICCR(Peak) ï¼
(50) (80) MA
Sector write current
ICCW(DC)
ï¼
(25) (50) MA CMOS level
(control signal=VCC-0.2)
ICCW(Peak) ï¼
(50) (80) MA
XIN
Tclkl
Tclkh
Symbol
Tclkl
Tclkh
Parameter
clock LOW time
clock HIGH time
Min
Max
20
20
2001-09-05 42/52
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