TLP331_07 Datasheet, PDF (4/8 Pages) Toshiba Semiconductor – GaAs Ired & Photo−Transistor

Isolation Characteristics (Ta = 25°C)
Characteristic
Capacitance (input to output)
Isolation resistance
Isolation voltage
Symbol
C_S
R_S
BV_S
Test Condition
V_S = 0, f = 1MHz
V = 500V
AC, 1 minute
AC, 1 second, in oil
DC, 1 minute, in oil
TLP331,TLP332
Min. Typ. Max. Unit
―
0.8
―
pF
5×10¹⁰
10¹⁴
―
Ω
5000
―
―
Vrms
― 10000 ―
― 10000 ― Vdc
Switching Characteristics (Ta = 25°C)
Characteristic
Rise time
Fall time
Turn−on time
Turn−off time
Turn−on time
Storage time
Turn−off time
Turn−on time
Storage time
Turn−off time
Fig. 1 Switching time test circuit
Symbol
t_r
t_f
t_on
t_off
t_ON
t_S
t_OFF
t_ON
t_S
t_OFF
Test Condition
Min.
―
V_CC = 10V
―
I_C = 2mA
R_L = 100Ω
―
―
―
R_L = 4.7kΩ
(Fig.1)
R_BE = OPEN
―
V_CC = 5V, I_F = 1.6mA
―
―
R_L = 4.7kΩ
(Fig.1)
R_BE = 470kΩ (TLP331)
―
V_CC = 5V, I_F = 1.6mA
―
Typ. Max. Unit
8
―
8
―
μs
10
―
8
―
10
―
50
―
μs
300 ―
12
―
30
―
μs
100 ―
IF
RBE
VCC
RL
VCE
IF
t_S
VCE
tON
4.5V ^VCC
0.5V
tOFF
4
2007-10-01