TLP331_07 Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – GaAs Ired & Photo−Transistor

TLP331,TLP332
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP331,TLP332
Office Machine
Household Use Equipment
Programmable Controllers
AC / DC−Input Module
Telecommunication
Unit in mm
The TOSHIBA TLP331 and TLP332 consists of a gallium arsenide
infrared emitting diode optically coupled to a photo−transistor in a six
lead plastic DIP package.
This photocoupler provides the unique feature of high current transfer
ratio at both low output voltage and low input current. This makes it
ideal for use in low power logic circuits, telecommunications equipment
and portable electronics isolation applications.
TLP332 is no−base internal connection for high−EMI environments.
• Collector−emitter voltage: 55V (min.)
• Isolation voltage: 5000Vrms (min.)
• UL recognized: UL1577, file no. E67349
• Current transfer ratio
TOSHIBA
Weight: 0.4 g
11−7A8
Classi−
fication
(*)
Rank BV
Current Transfer Ratio (min.)
Ta = 25°C
Ta = −25~75°C
I_F = 1mA
I_F = 0.5mA I_F = 1mA
V_CE = 0.5V V_CE = 1.5V V_CE = 0.5V
200%
100%
100%
Standard
100%
50%
50%
Marking
Of
Classi−
Fication
BV
BV, blank
(*) Ex. Standard: TLP331
Rank BV: TLP331(BV)
(Note) Application type name for certification test,
please use standard product type name, i.e.
TLP331(BV): TLP331
Pin Configurations (top view)
TLP331
TLP332
1
61
6
2
52
5
3
43
4
1: ANODE
2: CATHODE
3: NC
4: EMITTER
5: COLLECTOR
6: BASE
1: ANODE
2: CATHODE
3: NC
4: EMITTER
5: COLLECTOR
6: NC
1
2007-10-01