TLP331_07 Datasheet, PDF (3/8 Pages) Toshiba Semiconductor – GaAs Ired & Photo−Transistor

Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Forward voltage
V_F
I_F = 10mA
Reverse current
I_R
V_R = 5V
Capacitance
Collector−emitter
breakdown voltage
Emitter−collector
breakdown voltage
Collector−base breakdown voltage
(TLP331)
Emitter−base breakdown voltage
(TLP331)
Collector dark current
Collector dark current
(TLP331)
C_T V = 0, f = 1MHz
V_(BR)CEO I_C = 0.5mA
V_(BR)ECO I_E = 0.1mA
V_(BR)CBO I_C = 0.1mA
V_(BR)EBO I_E = 0.1mA
I_CEO
I_CER
V_CE = 24V
V_CE = 24V, Ta = 85°C
V_CE = 24V, Ta = 85°C
R_BE = 1MΩ
Collector dark current
(TLP331)
I_CBO V_CB = 10V
DC forward current gain
(TLP331)
h_FE V_CE = 5V, I_C = 0.5mA
Capacitance (collector to emitter)
C_CE V = 0 , f = 1MHz
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Current transfer ratio
Low input CTR
Base photo−current (TLP331)
Collector−emitter
saturation voltage
Symbol
Test Condition
I_C / I_F
I_F = 1mA, V_CE = 0.5V
Rank BV
I_C / I_F(low)
I_F = 0.5mA, V_CE = 1.5V
Rank BV
I_PB
V_CE(sat)
I_F = 1mA, V_CB = 5V
I_C = 0.5mA I_F = 1mA
I_C = 1mA I_F = 1mA
Rank BV
Coupled Electrical Characteristics (Ta = 25~75°C)
Characteristic
Current transfer ratio
Low input CTR
Symbol
Test Condition
I_C / I_F
I_F = 1mA, V_CE = 0.5V
Rank BV
I_C / I_F(low)
I_F = 0.5mA, V_CE = 1.5V
Rank BV
TLP331,TLP332
Min. Typ. Max. Unit
1.0 1.15 1.3
V
―
―
10
μA
―
30
―
pF
55
―
―
V
7
―
―
V
80
―
―
V
7
―
―
V
―
10 100 nA
―
2
50
μA
―
0.5
10
μA
―
0.1
―
nA
― 1000 ―
―
―
12
―
pF
Min. Typ. Max. Unit
100
―
1200
%
200
―
1200
50
―
―
%
100
―
―
―
10
―
μA
―
—
0.4
―
0.2
―
V
―
―
0.4
Min. Typ. Max. Unit
50
―
―
%
100
―
―
―
50
―
%
―
100
―
3
2007-10-01