TIM7785-6UL_09 Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – HIGH POWER P1dB=38.5dBm at 7.7GHz to 8.5GHz

TIM7785-6UL
Power Dissipation vs. Case Temperature
50
40
30
20
10
0
0
40
80
120
160
200
Tc (℃)
IM3 vs. Output Power Characteristics
-20
VDS= 10V
IDS≅ 1.6A
f= 8.1GHz
Δf= 5MHz
-30
-40
-50
-60
23
25
27
29
31
33
Po(dBm), Single Carrier Level
4