TIM7785-6UL_09 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – HIGH POWER P1dB=38.5dBm at 7.7GHz to 8.5GHz

MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER GaAs FET
TIM7785-6UL
FEATURES
„ HIGH POWER
P1dB=38.5dBm at 7.7GHz to 8.5GHz
„ HIGH GAIN
G1dB= 8.5dB at 7.7GHz to 8.5GHz
„ BROAD BAND INTERNALLY MATCHED FET
„ HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25_°C )
CHARACTERISTICS SYMBOL CONDITIONS
UNIT MIN. TYP. MAX.
Output Power at 1dB Gain
P1dB
dBm 37.5 38.5 ⎯
Compression Point
Power Gain at 1dB Gain
G1dB
VDS= 10V
dB 7.5 8.5 ⎯
Compression Point
IDSset=1.3A
Drain Current
IDS1
f = 7.7 to 8.5GHz
A
⎯ 1.6 1.9
Gain Flatness
Power Added Efficiency
ΔG
ηadd
dB ⎯ ⎯ ±0.6
%
⎯ 38 ⎯
3rd Order Intermodulation
IM3
Two-Tone Test
dBc -44 -47 ⎯
Distortion
Po= 27.5dBm
Drain Current
IDS2
(Single Carrier Level)
A
Channel Temperature Rise
ΔTch
(VDS X IDS +Pin-P1dB)
°^C
X Rth(c-c)
Recommended gate resistance(Rg) : Rg= 150 Ω(MAX.)
⎯ 1.3 1.5
⎯ ⎯ 80
ELECTRICAL CHARACTERISTICS ( Ta= 25_°C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
SYMBOL CONDITIONS
gm VDS= 3V
IDS= 2.0A
VGSoff VDS= 3V
IDS= 20mA
IDSS VDS= 3V
VGS= 0V
VGSO IGS= -70μA
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
⎯ 1.24 ⎯
V -1.0 -2.5 -4.0
A
⎯ 3.6 ⎯
V
-5 ⎯ ⎯
°^C/W ⎯ 3.8 4.6
‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. May 2009