TIM7785-6UL_09 Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – HIGH POWER P1dB=38.5dBm at 7.7GHz to 8.5GHz

RF PERFORMANCE
TIM7785-6UL
Output Power vs. Frequency
42
VDS= 10V
41
IDS≅ 1.6A
Pin= 30dBm
40
39
38
37
36
7.4 7.6 7.8
8
8.2 8.4 8.6 8.8
Frequency (GHz)
Output Power vs. Input Power
40
f= 8.1GHz
3 9 ^{VDS= 10V}
IDS≅ 1.6A
38
37
36
35
34
33
32
31
23
25
Po
ηadd
27
29
31
Pin (dBm)
90
80
70
60
50
40
30
20
10
0
33
3