TIM7785-6UL_09 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – HIGH POWER P1dB=38.5dBm at 7.7GHz to 8.5GHz

TIM7785-6UL
ABSOLUTE MAXIMUM RATINGS ( Ta= 25_°C )
CHARACTERISTICS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25 _°C)
Channel Temperature
Storage
SYMBOL
VDS
VGS
IDS
PT
Tch
Tstg
UNIT
V
V
A
W
°^C
°^C
PACKAGE OUTLINE (2-11D1B)
RATING
15
-5
5.0
32.6
175
-65 to +175
Unit in mm
c Gate
d Source
e Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2