SSM6N55NU_14 Datasheet, PDF (4/9 Pages) Toshiba Semiconductor – MOSFETs Silicon N-Channel MOS

SSM6N55NU
5.5. Source-Drain Characteristics (T_a = 25 unless otherwise specified)
(Q1,Q2 Common)
Characteristics
Diode forward voltage
Note 1: Pulse measurement.
6. Marking
(Note 1)
Symbol
Test Condition
V_DSF I_D = -4.0 A, V_GS = 0 V
Min Typ. Max Unit
 -0.85 -1.2
V
Fig. 6.1 Marking
Fig. 6.2 Pin Condition(Top View)
4
2014-04-04
Rev.2.0