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SSM6N55NU_14 Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – MOSFETs Silicon N-Channel MOS
MOSFETs Silicon N-Channel MOS
SSM6N55NU
1. Applications
• Power Management Switches
• DC-DC Converters
2. Features
(1) 4.5V gate drive voltage.
(2) Low drain-source on-resistance
: RDS(ON) = 46 mΩ (max) (@VGS = 10 V)
RDS(ON) = 64 mΩ (max) (@VGS = 4.5 V)
3. Packaging and Pin Configuration
UDFN6
SSM6N55NU
1. Source1
2. Gate1
3. Drain2
4. Source2
5. Gate2
6. Drain1
Start of commercial production
2011-11
1
2014-04-04
Rev.2.0