SSM6N55NU_14 Datasheet, PDF (2/9 Pages) Toshiba Semiconductor – MOSFETs Silicon N-Channel MOS

SSM6N55NU
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T_a = 25)
(Q1,Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DSS
30
V
Gate-source voltage
V_GSS
±20
Drain current (DC)
(Note 1)
I_D
4.0
A
Drain current (pulsed)
(Note 1), (Note 2)
I_DP
10
Power dissipation
(Note 3)
P_D
1
W
Power dissipation
t ≤ 10 s
(Note 3)
P_D
2
W
Channel temperature
T_ch
150

Storage temperature
T_stg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Pulse width (PW) ≤ 10 ms, duty ≤ 1%
Note 3: Device mounted on a 25.4 mm × 25.4 mm × 1.6 mm FR4 glass epoxy board (total dissipation)
(with a dissipating copper surface of 25.4 mm × 25.4 mm)
Note:
Note:
The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables,
operators, soldering irons and other objects should be protected against anti-static discharge.
The channel-to-ambient thermal resistance, R_th(ch-a), and the drain power dissipation, P_D, vary according to
the board material, board area, board thickness and pad area. When using this device, be sure to take heat
dissipation fully into account.
2
2014-04-04
Rev.2.0