SSM6N55NU_14 Datasheet, PDF (3/9 Pages) Toshiba Semiconductor – MOSFETs Silicon N-Channel MOS

SSM6N55NU
5. Electrical Characteristics
5.1. Static Characteristics (T_a = 25 unless otherwise specified)(Q1,Q2 Common)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
I_GSS V_GS = ±20 V, V_DS = 0 V


±10
µA
Drain cut-off current
I_DSS V_DS = 30 V, V_GS = 0 V


1
Drain-source breakdown voltage
V_(BR)DSS I_D = 10 mA, V_GS = 0 V
30


V
Drain-source breakdown voltage (Note 1) V_(BR)DSX I_D = 10 mA, V_GS = -20 V
10


Gate threshold voltage
(Note 2) V_th V_DS = 10 V, I_D = 0.1 mA
1.3

2.5
Drain-source on-resistance
(Note 3) R_DS(ON) I_D = 4.0 A, V_GS = 10 V

33
46
mΩ
I_D = 2.0 A, V_GS = 4.5 V

48
64
Forward transfer admittance
(Note 3) |Y_fs| V_DS = 10 V, I_D = 1.0 A
3.4
6.8

S
Note 1: If a reverse bias is applied between gate and source, this device enters V_(BR)DSX mode. Note that the drain-
source breakdown voltage is lowered in this mode.
Note 2: Let V_th be the voltage applied between gate and source that causes the drain current (I_D) to below (0.1 mA for
this device). Then, for normal switching operation, V_GS(ON) must be higher than V_th, and V_GS(OFF) must be
lower than V_th. This relationship can be expressed as: V_GS(OFF) < V_th < V_GS(ON).
Take this into consideration when using the device.
Note 3: Pulse measurement.
5.2. Dynamic Characteristics (T_a = 25 unless otherwise specified)(Q1,Q2 Common)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (turn-on time)
Switching time (turn-off time)
Symbol
Test Condition
C_iss V_DS = 15 V, V_GS = 0 V,
C_rss ^{f = 1 MHz}
C_oss
t_on V_DD = 15 V, I_D = 0.5 A
V_GS = 0 to 4.5 V, R_G = 10 Ω,
t_off ^{Duty ≤ 1%, Input: t}r^{, t}f ^{< 5 ns}
Ground source, See Chapter 5.3
Min Typ. Max Unit

280

pF

20


53


15

ns

12

5.3. Switching Time Test Circuit
Fig. 5.3.1 Test Circuit of Switching Time
Fig. 5.3.2 Input Waveform/Output Waveform
5.4. Gate Charge Characteristics (T_a = 25 unless otherwise specified)
(Q1,Q2 Common)
Characteristics
Symbol
Test Condition
Total gate charge (gate-source plus gate-drain)
Gate-source charge 1
Gate-drain charge
Q_g
Q_gs1
Q_gd
V_DD = 15 V, V_GS = 4.5 V,
I_D = 4.0 A
Min Typ. Max Unit

2.5

nC

1.6


0.5

3
2014-04-04
Rev.2.0