SSM6N15AFE Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – Load Switching Applications

1000
Common source
VDS = 3 V
Ta=25°C
Pulse test
100
|Y_fs| – I_D
10
1
1
10
100
1000
Drain current I_D (mA)
C – V_DS
100
10
Ciss
Common source
Ta = 25°C
f = 1 MHz
VGS = 0 V
1
0.1
1
Coss
Crss
10
100
Drain-source voltage V_DS (V)
SSM6N15AFE
I_DR – V_DS
1000
100
25 °C
10
Ta =100 °C
1
0.1
0
–0.5
Common source
VGS = 0 V
Pulse test
D
G
I_DR
−25 °C
S
–1.0
–1.5
Drain-source voltage V_DS (V)
1000
toff
100 _tf
t – I_D
Common source
VDD = 5 V
VGS = 0 to 5 V
Ta = 25 °C
RG = 50Ω
10
ton
tr
1
1
10
100
1000
Drain current I_D (mA)
P_D* – T_a
250
Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6
mm,
Cu
Pad:
0.135
mm2
×
6)
200
150
100
50
0
0
40
80
120
160
Ambient temperature Ta (°C)
*:Total Rating
4
2010-11-22