SSM6N15AFE Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Load Switching Applications

SSM6N15AFE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
SSM6N15AFE
Load Switching Applications
• 2.5 V drive
• N-ch 2-in-1
• Low ON-resistance: R_DS(ON) = 3.6 Ω (max) (@V_GS = 4.0 V)
R_DS(ON) = 6.0 Ω (max) (@V_GS = 2.5 V)
1.6±0.05
1.2±0.05
Unit: mm
1
6
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
2
5
3
4
Drain-Source voltage
V_DSS
30
V
Gate-Source voltage
V_GSS
±20
V
Drain current
Power dissipation
Channel temperature
DC
Pulse
I_D
100
mA
I_DP
400
P_D (Note 1)
150
mW
T_ch
150
°C
ES6
1.Source1
2.Gate1
3.Drain2
4.Source2
5.Gate2
6.Drain1
Storage temperature range
T_stg
−55 to 150
°C
JEDEC
―
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
TOSHIBA
―
2-2N1D
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 3.0 mg (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm² × 6)
0.3 mm
Marking
6 54
DI
123
Equivalent Circuit (top view)
6 54
Q1
Q2
1 23
1
2010-11-22