SSM6N15AFE Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Load Switching Applications

Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
SSM6N15AFE
Characteristics
Symbol
Test Condition
Min
Typ.
Max Unit
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Drain-source forward voltage
V _{(BR) DSS} I_D = 0.1 mA, V_GS = 0 V
30
⎯
⎯
V
V _{(BR) DSX} I_D = 0.1 mA, V_GS = -10 V (Note 3) 16
⎯
⎯
I_DSS
V_DS = 30 V, V_GS = 0 V
⎯
⎯
1
μA
I_GSS
V_GS = ±16 V, V_DS = 0 V
⎯
⎯
±1
μA
V_th
V_DS = 3 V, I_D = 0.1 mA
0.8
⎯
1.5
V
⎪Y_fs⎪
V_DS = 3 V, I_D = 10 mA (Note 2) 35
⎯
⎯
mS
I_D = 10 mA, V_GS = 4 V (Note 2) ⎯
2.3
3.6
R_{DS (ON)}
Ω
I_D = 10 mA, V_GS = 2.5 V (Note 2) ⎯
3.5
6.0
C_iss
⎯
13.5
⎯
C_oss
V_DS = 3 V, V_GS = 0 V, f = 1 MHz
⎯
8.0
⎯
pF
C_rss
⎯
6.5
⎯
t_on
V_DD = 5 V, I_D = 10 mA,
t_off
V_GS = 0 to 5 V, R_G = 50 Ω
⎯
5.5
⎯
ns
⎯
35
⎯
V_DSF
I_D = -100 mA, V_GS = 0 V (Note 2) ⎯
-0.85 -1.2
V
Note 2: Pulse test
Note 3: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the
drain-source breakdown voltage is lowered in this mode.
Switching Time Test Circuit
(a) Test circuit
5V
IN
0
10 μs
V_DD = 5 V
R_G = 50 Ω
Duty ≤ 1%
V_IN: t_r, t_f < 5 ns
Common Source
Ta = 25°C
OUT
V_DD
(b) V_IN
5V
0V
(c) V_OUT V_DD
V_{DS (ON)}
10%
90%
90%
10%
t_r
t_f
t_on
t_off
Precaution
V_th can be expressed as voltage between gate and source when low operating current value is I_D = 0.1 mA for this
product. For normal switching operation, V_{GS (on)} requires higher voltage than V_th and V_{GS (off)} requires lower voltage
than V_th. (Relationship can be established as follows: V_{GS (off)} < V_th < V_{GS (on)} )
Please take this into consideration for using the device.
Do not use this device under avalanche mode. It may cause the device to break down.
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Thermal resistance R_{th (ch-a)} and power dissipation P_D vary depending on board material, board area, board thickness
and pad area. When using this device, please take heat dissipation into consideration
2
2010-11-22