SSM6N15AFE Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – Load Switching Applications

400
Common source
Ta = 25 °C
Pulse test
300
I_D – V_DS
10 V
200
100
4.0 V
3.0 V
2.7 V
2.5 V
2.3 V
VGS = 2.1 V
0
0
0.2
0.4
0.6
0.8
1.0
Drain-source voltage V_DS (V)
SSM6N15AFE
1000
100
I_D – V_GS
10
Ta = 100 °C
1
0.1
0.01
0
− 25 °C
25 °C
Common source
VDS = 3 V
Pulse test
1.0
2.0
3.0
4.0
Gate-source voltage V_GS (V)
R_{DS (ON)} – I_D
6
2.1 V _{2.3 V 2.5 V} 2.7 V
5
3.0 V
4
4.0 V
3
2
VGS = 10 V
1
Common source
Ta = 25°C
Pulse test
0
0
100
200
300
400
Drain current I_D (mA)
R_{DS (ON)} – V_GS
12
ID = 10 mA
Common source
10
Pulse test
8
6
25 °C
4
Ta = 100 °C
2
− 25 °C
0
0
2
4
6
8
10
Gate-source voltage V_GS (V)
R_{DS (ON)} – Ta
6
5
ID = 10 mA / VGS = 2.5 V
4
3
2
10 mA / 4.0 V
1
Common source
Pulse test
0
−50
0
50
100
150
Ambient temperature Ta (°C)
V_th – Ta
2.0
Common source
VDS = 3 V
ID = 0.1 mA
1.0
0
−50
0
50
100
150
Ambient temperature Ta (°C)
3
2010-11-22