SSM6N09FU_07 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

(Q1, Q2 common)
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
−25
V_th – Ta
Common Source
ID = 0.1 mA
VDS = 5 V
0
25
50
75 100 125 150
Ambient temperature Ta (°C)
SSM6N09FU
1000
800
I_DR – V_DS
Common Source
VGS = 0
Ta = 25°C
D
600 G
IDR
S
400
200
0
0 −0.2 −0.4 −0.6 −0.8 −1 −1.2 −1.4
Drain-Source voltage VDS (V)
C – V_DS
500
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25°C
100
Ciss
10
Coss
Crss
1
0.1
1
10
100
Drain-Source voltage VDS (V)
5000
1000
t – I_D
Common Source
VDD = 5 V
VGS = 0~4 V
Ta = 25°C
toff
tf
100
ton
tr
10
1
10
100
Drain current ID (mA)
1000
P_D* – Ta
400
Mounted on FR4 board.
(25.4 mm × 25.4 mm ×1.6 t
2
Cu pad: 0.32 mm × 6) Figure 1
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
*: Total rating
4
2007-11-01