SSM6N09FU_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

SSM6N09FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N09FU
High Speed Switching Applications
Unit: mm
• Small package
• Low Drain-Source ON resistance.
: R_on = 0.7 Ω (max) (@V_GS = 10 V)
: R_on = 1.2 Ω (max) (@V_GS = 4 V)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
30
V
Gate-Source voltage
V_GSS
±20
V
Drain current
DC
Pulse
I_D
400
mA
I_DP
800
Drain power dissipation (Ta = 25°C) P_D (Note 1)
300
mW
Channel temperature
Storage temperature range
T_ch
150
°C
JEDEC
―
T_stg
−55~150
°C
JEITA
―
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2J1C
Weight: 6.8 mg (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm² × 6) Figure 1.
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01