SSM6N09FU_07 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

(Q1, Q2 common)
1000
800
600
400
200
0
0
I_D – V_DS
10
4
Common Source
Ta = 25°C
3.3
3.0
2.8
2.6
VGS = 2.4 V
0.5
1
1.5
2
Drain-Source voltage VDS (V)
SSM6N09FU
R_{DS (ON)} – I_D
2
Common Source
1.8
Ta = 25°C
1.6
1.4
1.2
VGS = 3.3 V
1
4V
0.8
0.6
10 V
0.4
0.2
0
0
200
400
600
800
1000
Drain current ID (mA)
1000
100
Common Source
VDS = 5 V
I_D – V_GS
25°C
10
Ta = 100°C
1
−25°C
0.1
0.01
0
1
2
3
4
Gate-Source voltage VGS (V)
R_{DS (ON)} – V_GS
2
Common Source
1.8
ID = 200 mA
1.6
1.4
1.2
Ta = 100°C
1
0.8
25°C
0.6
0.4
−25°C
0.2
0
0
2
4
6
8
10
Gate-Source voltage VGS (V)
R_{DS (ON)} – Ta
2
Common Source
1.8
ID = 200 mA
1.6
1.4
1.2
VGS = 3.3 V
1
4V
0.8
10 V
0.6
0.4
0.2
0
−25 0
25
50
75 100 125 150
Ambient temperature Ta (°C)
1000
Common Source
500 ^{VDS = 5 V}
Ta = 25°C
300
⏐Y_fs⏐ – I_D
100
50
30
10
10
30 50
100
300 500 1000
Drain current ID (mA)
3
2007-11-01