SSM6K411TU Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – Power Management Switch Applications High-Speed Switching Applications

100
Common Source
VDS = 3 V
30 ^{Ta = 25 °C}
Pulse test
10
|Y_fs| – I_D
3.0
1.0
0.3
0.1
0.01
0.1
1
10
100
Drain current I_D (A)
SSM6K411TU
I_DR – V_DS
100
10
1
0.1
0.01
100 °C
0.001
0
-0.2
25 °C
−25 °C
-0.4
-0.6
Common Source
VGS = 0 V
Pulse Test
D
G
I_DR
S
-0.8
-1.0
-1.2
Drain-source voltage V_DS (V)
5000
3000
C – V_DS
1000
500
300
100
Ciss
Coss
Crss
50
Common Source
30 _{Ta = 25 °C}
f = 1 MHz
VGS = 0 V
10
0.1
1
10
100
Drain-source voltage V_DS (V)
1000
toff
tf
100
t – I_D
ton
10
tr
1
0.01
Common Source
VDD = 10 V
VGS = 0 to 2.5 V
Ta = 25 °C
RG = 4.7 Ω
0.1
1
10
Drain current I_D (A)
4
Dynamic Input Characteristic
12
10
8
VDD = 10 V
VDD = 16 V
6
4
2
Common Source
ID = 10 A
Ta = 25 °C
00
10
20
30
Total Gate Charge Q_g (nC)
2010-06-09