SSM6K411TU Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Power Management Switch Applications High-Speed Switching Applications

SSM6K411TU
Electrical Characteristics(Ta = 25°C)
Characteristic
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Turn-on time
Turn-off time
Drain-Source forward voltage
Note 3: Pulse test
Symbol
Test Conditions
Min
V _{(BR) DSS} I_D = 10 mA, V_GS = 0 V
20
V _{(BR) DSX} I_D = 10 mA, V_GS = -12 V
8
I_DSS
V_DS = 20 V, V_GS = 0 V
⎯
I_GSS
V_GS = ±12 V, V_DS = 0 V
⎯
V_th
V_DS = 3 V, I_D = 1 mA
0.5
|Y_fs|
V_DS = 3 V, I_D = 2.0 A
(Note 3) 6.5
I_D = 7.0 A, V_GS = 4.5 V (Note 3) ⎯
R_{DS (ON)} I_D = 6.0 A, V_GS = 3.5 V (Note 3) ⎯
I_D = 4.0 A, V_GS = 2.5 V (Note 3) ⎯
C_iss
⎯
C_oss
V_DS = 10 V, V_GS = 0 V, f = 1 MHz
⎯
C_rss
⎯
Q_g
Q_gs1
V_DD = 10 V, I_D= 10 A
V_GS = 4.5 V
⎯
⎯
Q_gd
⎯
t_on
V_DD = 10 V, I_D = 2 A
⎯
t_off
V_GS = 0 to 2.5 V, R_G = 4.7 Ω
⎯
V_DSF
I_D = -10 A, V_GS = 0 V(Note 3)
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
13
8.7
10.5
15.5
710
240
170
9.4
1.9
4.1
32
23
-0.8
Max Unit
⎯
V
⎯
10
μA
±0.1 μA
1.2
V
⎯
S
12
14.3 mΩ
23.8
⎯
⎯
pF
⎯
⎯
⎯
nC
⎯
⎯
ns
⎯
-1.2 V
Switching Time Test Circuit
(a) Test Circuit
2.5 V
IN
0
10 μs
(b) V_IN
OUT
V_DD = 10 V
R_G = 4.7 Ω
Duty ≤ 1%
V_IN: t_r, t_f < 5 ns
Common Source
Ta = 25°C
(c) V_OUT
V_DD
2.5 V
0V
V_DD
V_{DS (ON)}
10%
90%
90%
10%
t_r
t_f
t_on
t_off
Notice on Usage
Let V_th be the voltage applied between gate and source that causes the drain current (I_D) to be low (1 mA for the
SSM6K411TU). Then, for normal switching operation, V_GS(on) must be higher than V_th, and V_GS(off) must be lower than
V_th. This relationship can be expressed as: V_GS(off) < V_th < V_GS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Thermal resistance R_{th (ch-a)} and power dissipation P_D vary depending on board material, board area, board thickness
and pad area. When using this device, please take heat dissipation into consideration
2
2010-06-09