SSM6K411TU Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – Power Management Switch Applications High-Speed Switching Applications

20
VGS =12 V
16
4.5 V
12
I_D – V_DS
3.5 V
2.5 V
8
1.8 V
4
Common Source
Ta = 25 °C
Pulse test
0
0
0.1
0.2
0.3
0.4
0.5
Drain-source voltage V_DS (V)
SSM6K411TU
100000
Common Source
VDS = 3 V
10000 ^{Pulse test}
I_D – V_GS
1000
100
10
1
0.1
0
Ta = 100°C
25°C
-25°C
0.5
1
1.5
2
2.5
Gate-source voltage V_GS (V)
R_{DS (ON)} – V_GS
80
ID = 4.0A
Common Source
Pulse test
60
40
20
25°C
Ta = 125°C
−25°C
0
0
2
4
6
8
10
12
Gate-source voltage V_GS (V)
R_{DS (ON)} – I_D
40
Common Source
Ta = 25 °C
Pulse test
30
20
VGS = 2.5 V
3.5 V
10
4.5 V
0
0
5
10
15
20
Drain current I_D (A)
30
Common Source
Pulse Test
25
R_{DS (ON)} – Ta
ID = 4.0 A / VGS = 2.5 V
20
15
6.0 A / 3.5 V
10
7.0 A / 4.5 V
5
0
−50
0
50
100
150
Ambient temperature Ta (°C)
3
V_th – Ta
2.0
Common Source
VDS = 3 V
ID = 1 mA
1.0
0
−50
0
50
100
150
Ambient temperature Ta (°C)
2010-06-09