SSM6K411TU Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Power Management Switch Applications High-Speed Switching Applications

SSM6K411TU
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K411TU
○ Power Management Switch Applications
○ High-Speed Switching Applications
• 2.5-V drive
• Low ON-resistance：R_DS(ON) = 23.8 mΩ (max) (@V_GS = 2.5 V)
R_DS(ON) = 14.3 mΩ (max) (@V_GS = 3.5 V)
R_DS(ON) = 12 mΩ (max) (@V_GS = 4.5 V)
2.1±0.1
1.7±0.1
Unit: mm
1
6
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
2
5
3
4
Drain-Source voltage
V_DSS
20
V
Gate-Source voltage
V_GSS
±12
V
Drain current
DC
I_D (Note1)
10
A
Pulse
I_DP(Note1)
20
Power dissipation
Channel temperature
P_D (Note2)
1
W
t<10s
2
T_ch
150
°C
UF6
1,2,5,6 ： Drain
3
： Gate
4
： Source
Storage temperature range
T_stg
−55 to 150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
TOSHIBA
―
2-2T1D
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
Weight: 7.0 mg (typ.)
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
Marking
654
KNI
123
Equivalent Circuit (top view)
654
123
1
2010-06-09