SSM6J216FE_14 Datasheet, PDF (4/9 Pages) Toshiba Semiconductor – MOSFETs Silicon P-Channel MOS (U-MOSVI)

SSM6J216FE
5.5. Source-Drain Characteristics (Unless otherwise specified, T_a = 25)
Characteristics
Diode forward voltage
Note 1: Pulse measurement.
6. Marking
(Note 1)
Symbol
Test Condition
V_DSF I_D = 4.8 A, V_GS = 0 V
Min Typ. Max Unit

0.8
1.1
V
Fig. 6.1 Marking
4
2014-03-12
Rev.3.0