SSM6J216FE_14 Datasheet, PDF (3/9 Pages) Toshiba Semiconductor – MOSFETs Silicon P-Channel MOS (U-MOSVI)

SSM6J216FE
5. Electrical Characteristics
5.1. Static Characteristics (Unless otherwise specified, T_a = 25)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
I_GSS V_GS = ±8 V, V_DS = 0 V


±1
µA
Drain cut-off current
I_DSS V_DS = -12V, V_GS = 0 V


-1
Drain-source breakdown voltage
V_(BR)DSS I_D = -1 mA, V_GS = 0 V
-12


V
Drain-source breakdown voltage (Note 1) V_(BR)DSX I_D = -1 mA, V_GS = 5 V
-7


Gate threshold voltage
(Note 2) V_th V_DS = -3 V, I_D = -1 mA
-0.3

-1.0
Drain-source on-resistance
(Note 3) R_DS(ON) I_D = -3.5 A, V_GS = -4.5 V

26.0 32.0 mΩ
I_D = -3.0 A, V_GS = -2.5 V

31.5 39.3
I_D = -2.0 A, V_GS = -1.8 V

39.0 56.0
I_D = -0.75 A, V_GS = -1.5 V

49.0 88.1
Forward transfer admittance
(Note 3) |Y_fs| V_DS = -3 V, I_D = -1.0 A
5.0 10.0 
S
Note 1: If a reverse bias is applied between gate and source, this device enters V_(BR)DSX mode. Note that the drain-
source breakdown voltage is lowered in this mode.
Note 2: Let V_th be the voltage applied between gate and source that causes the drain current (I_D) to below (-1 mA for
this device). Then, for normal switching operation, V_GS(ON) must be higher than V_th, and V_GS(OFF) must be
lower than V_th. This relationship can be expressed as: V_GS(OFF) < V_th < V_GS(ON).
Take this into consideration when using the device.
Note 3: Pulse measurement.
5.2. Dynamic Characteristics (Unless otherwise specified, T_a = 25)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (turn-on time)
Switching time (turn-off time)
Symbol
Test Condition
Min Typ. Max Unit
C_iss V_DS = -12 V, V_GS = 0 V,
C_rss ^{f = 1 MHz}
 1040 
pF

180

C_oss

200

t_on V_DD = -10 V, I_D = -2.0 A

32

ns
V_GS = 0 to -2.5 V, R_G = 4.7 Ω,
t_off ^{Duty ≤ 1%, Input: t}r^{, t}f ^{< 5 ns}

145

Common source, See Chapter 5.3
5.3. Switching Time Test Circuit
Fig. 5.3.1 Test Circuit of Switching Time
Fig. 5.3.2 Input Waveform/Output Waveform
5.4. Gate Charge Characteristics (Unless otherwise specified, T_a = 25)
Characteristics
Symbol
Test Condition
Total gate charge (gate-source plus gate-drain)
Gate-source charge 1
Gate-drain charge
Q_g
Q_gs1
Q_gd
V_DD = -6 V, V_GS = -4.5 V,
I_D = -4.8 A
Min Typ. Max Unit

12.7

nC

1.7


3.0

3
2014-03-12
Rev.3.0