SSM6J216FE_14 Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – MOSFETs Silicon P-Channel MOS (U-MOSVI)

MOSFETs Silicon P-Channel MOS (U-MOS)
SSM6J216FE
1. Applications
• Power Management Switches
2. Features
(1) 1.5-V gate drive voltage.
(2) Low drain-source on-resistance
: R_DS(ON) = 88.1 mΩ (max) (@V_GS = -1.5 V)
R_DS(ON) = 56.0 mΩ (max) (@V_GS = -1.8 V)
R_DS(ON) = 39.3 mΩ (max) (@V_GS = -2.5 V)
R_DS(ON) = 32.0 mΩ (max) (@V_GS = -4.5 V)
3. Packaging and Pin Configuration
ES6
SSM6J216FE
1.2.5.6 : Drain
3 : Gate
4 : Source
Start of commercial production
2012-11
1
2014-03-12
Rev.3.0