SSM5N03FE Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – High-Speed Switching Applications

(Q1, Q2 Common)
R_{DS (ON)} – I_D
10
Common Source
Ta = 25°C
8
6
4
2.5
2
VGS = 4 V
0
0
20
40
60
80
100
Drain current I_D (mA)
SSM5N03FE
10000
5000
3000
1000
500
300
toff
tf
t – I_D
Common Source
VDD = 3 V
VGS = 0 to 2.5 V
Ta = 25°C
ton
100
tr
50
30
0.1
0.3
1
3
10
30
100
Drain current I_D (mA)
R_{DS (ON)} – Ta
10
Common Source
ID = 10 mA
8
6
2.5
4
VGS = 4 V
2
0
−25
0
25
50
75 100 125 150
Ambient temperature Ta (°C)
P_D* – Ta
250
Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 t
200
Cu
Pad:
0.135
2
mm
×
5)
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
*: Total rating
4
2007-11-01