SSM5N03FE Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Speed Switching Applications

SSM5N03FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM5N03FE
High-Speed Switching Applications
Analog-Switch Applications
• Input impedance is high; driving current is extremely low.
• Can be directly driven by a CMOS device even at low voltage due to low
gate threshold voltage.
• High-speed switching
• Housed in an ultra-small package suitable for high density mounting
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
V_DS
20
V
Gate–source voltage
V_GSS
10
V
Drain current
I_D
100
mA
Drain power dissipation
P_D (Note 1)
150
mW
Channel temperature
T_ch
150
°C
Storage temperature
T_stg
−55 to 150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-2P1B
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.003 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Total rating, mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.135 mm² × 5)
0.3 mm
Marking
5
4
DA
1
2
3
Equivalent Circuit (top view)
5
4
Q1
Q2
1
2
3
1
2007-11-01