SSM5N03FE Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – High-Speed Switching Applications

(Q1, Q2 Common)
100
2.5
80
I_D – V_DS
2.0
1.9
Common Source
Ta = 25°C
60
1.8
40
1.7
1.6
20
VGS = 1.4 V
0
0
2
4
6
8
10
Drain–source voltage V_DS (V)
SSM5N03FE
I_D – V_DS (low-voltage region)
100
4.0 2.5
2.2
2.0
80
Common Source
Ta = 25°C
60
1.8
40
1.6
20
VGS = 1.4 V
0
0
0.2
0.4
0.6
0.8
1.0
Drain–source voltage V_DS (V)
I_DR – V_DS
100
Common Source
VGS = 0
Ta = 25°C
10
D
G
1
0.1
IDR
S
0.01
0
−0.2
−0.4
−0.6 −0.8
−1.0 −1.2
Drain–source voltage V_DS (V)
1000
Common Source
VDS = 3 V
100
I_D – V_GS
10
Ta = 100°C
1
25°C
−25°C
0.1
0.01
0
0.5
1
1.5
2
2.5
3
Gate–source voltage V_GS (V)
300
Common Source
VDS = 3 V
Ta = 25°C
100
⎪Y_fs⎪ – I_D
50
30
10
5
1
35
10
30 50
100
Drain current I_D (mA)
100
50
30
10
5
3
1
0.1
C – V_DS
Common Source
VGS = 0
f = 1 MHz
Ta = 25°C
Ciss
Coss
Crss
0.3
1
3
10
30
Drain–source voltage V_DS (V)
3
2007-11-01