SSM5N03FE Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – High-Speed Switching Applications

Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Gate leakage current
Drain–source breakdown voltage
Drain cutoff current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Symbol
Test Condition
I_GSS
V _{(BR) DSS}
I_DSS
V_th
|Y_fs|
R_{DS (ON)}
C_iss
C_rss
C_oss
t_on
t_off
V_GS = 10 V, V_DS = 0 V
I_D = 100 μA, V_GS = 0 V
V_DS = 20 V, V_GS = 0 V
V_DS = 3 V, I_D = 0.1 mA
V_DS = 3 V, I_D = 10 mA
I_D = 10 mA, V_GS = 2.5 V
V_DS = 3 V, V_GS = 0 V, f = 1 MHz
V_DS = 3 V, V_GS = 0 V, f = 1 MHz
V_DS = 3 V, V_GS = 0 V, f = 1 MHz
V_DD = 3 V, I_D = 10 mA,
V_GS = 0 to 2.5 V
V_DD = 3 V, I_D = 10 mA,
V_GS = 0 to 2.5 V
SSM5N03FE
Min Typ. Max Unit
⎯
⎯
1
μA
20
⎯
⎯
V
⎯
⎯
1
μA
0.7
⎯
1.3
V
25
60
⎯
mS
⎯
4
12
Ω
⎯ 11.0 ⎯
pF
⎯
3.3
⎯
pF
⎯
9.3
⎯
pF
⎯ 0.16 ⎯
μs
⎯ 0.19 ⎯
Switching Time Test Circuit
(a) Test circuit
2.5 V
Input
0
10 μs
V_IN
I_D
R_L
Output
V_DD = 3 V
D.U. ^<= 1%
Input: t_r, t_f < 5 ns
(Z_out = 50 Ω)
Common Source
Ta = 25°C
V_DD
(b) V_IN
V_GS
(c) V_OUT
V_DS
2.5 V
90%
0
V_DD
V_{DS (ON)}
10%
90%
10%
t_r
t_f
t_on
t_off
Precaution
V_th can be expressed as the voltage between gate and source when the low operating current value is I_D = 100 μA for
this product. For normal switching operation, V_{GS (on)} requires a higher voltage than V_th, and V_{GS (off)} requires a lower
voltage than V_th. (The relationship can be established as follows: V_{GS (off)} < V_th < V_{GS (on).})
Take this into consideration when using the device.
2
2007-11-01