SSM3K01T Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K01T
1000
t – I_D
Common Source
VDD = 15 V
VGS = 0~2.5 V
RG = 4.7 W
Ta = 25°C
100
toff
tf
ton
tr
10
0.01
0.1
1
Drain current I_D (A)
Safe operating area
10
ID max (pulsed)
ID max (continuous)
1 ms*
10 ms*
1
DC operation
Ta = 25°C
10 s*
1.5
t = 10 s
1.25
1
P_D – Ta
Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t,
Cu Pad: 645 mm2）
0.75 _DC
0.5
0.25
0
0
25
50
75
100
125
150
Ambient temperature Ta (°C)
Mounted on FR4 board
0.1
(25.4 mm ´ 25.4 mm
´ 1.6 t,
Cu Pad:
645
mm2)
*: Single nonrepetitive
Pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.01
0.1
1
VDSS
max
10
Drain-source voltage V_DS (V)
1000
100
r_th – tw
100
10
1
0.001
0.01
Single pulse
Mounted on FR4 board
(C2u5.P4amd:m64´_{52m5.m4 2m)m} ´ 1.6 t,
0.1
1
10
100
1000
Pulse width tw (s)
4
2002-01-24