SSM3K01T Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K01T
SSM3K01T
High Speed Switching Applications
Unit: mm
· Small Package
· Low on Resistance: Ron = 120 mΩ (max) (@VGS = 4 V)
: Ron = 150 mΩ (max) (@VGS = 2.5 V)
· Low Gate Threshold Voltage: Vth = 0.6~1.1 V
(@VDS = 3 V, ID = 0.1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
V_DS
30
V
V_GSS
±10
V
I_D
3.2
I_DP
(Note2)
6.4
A
P_D
(Note1)
1250
mW
T_ch
150
°C
T_stg
-55~150
°C
Note1: Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm², t = 10 s)
Note2: The pulse width limited by max channel temperature.
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 10 mg (typ.)
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to
the board material, board area, board thickness and pad area, and are also affected by the environment in
which the product is used. When using this device, please take heat dissipation fully into account.
1
2002-01-24