SSM3K01T Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Marking
3
Equivalent Circuit
3
SSM3K01T
KW
1
2
1
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Drain-Source breakdown voltage
Drain Cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Note3: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
I_GSS
V_GS = ±10 V, V_DS = 0
¾
¾
±1
mA
V _{(BR) DSS} I_D = 1 mA, V_GS = 0
30
¾
¾
V
I_DSS
V_DS = 30 V, V_GS = 0
¾
¾
1
mA
V_th
V_DS = 3 V, I_D = 0.1 mA
0.6
¾
1.1
V
|Y_fs|
V_DS = 3 V, I_D = 1.6 A
(Note3) 2.6 5.2
¾
S
R_{DS (ON)} I_D = 1.6 A, V_GS = 4 V
(Note3) ¾
85
120 mW
R_{DS (ON)} I_D = 1.3 A, V_GS = 2.5 V
(Note3) ¾
115 150 mW
C_iss
V_DS = 10 V, V_GS = 0, f = 1 MHz
¾
152
¾
pF
C_rss
V_DS = 10 V, V_GS = 0, f = 1 MHz
¾
41
¾
pF
C_oss
V_DS = 10 V, V_GS = 0, f = 1 MHz
¾
102
¾
pF
t_on
V_DD = 15 V, I_D = 0.5 A
t_off
V_GS = 0~2.5 V, R_G = 4.7 W
¾
45
¾
nS
¾
69
¾
Switching Time Test Circuit
(a) Test circuit
10 ms
2.5 V
IN
0
I_D
V_DD = 15 V
OUT _{RG = 4.7 W}
D.U. ^<= 1%
V_IN: t_r, t_f < 5 ns
COMMON SOURCE
Ta = 25°C
V_DD
(b) V_IN
V_GS
(c) V_OUT
V_DS
2.5 V
0
V_DD
V_{DS (ON)}
10%
t_r
t_on
90%
10%
90%
t_f
t_off
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 mA for
this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires
lower voltage than Vth.
(relationship can be established as follows: VGS (off) < Vth < VGS (on))
Please take this into consideration for using the device.
VGS recommended voltage of 2.5 V or higher to turn on this product.
2
2002-01-24