SSM3K01T Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

4
10
3.5
3
2.5
2
1.5
1
0.5
0
0
I_D – V_DS
4.0 2.5
2.1
Common Source
Ta = 25°C
1.9 V
1.7 V
VGS = 1.5 V
0.5
1
1.5
2
Drain-Source voltage V_DS (V)
SSM3K01T
10000
Common Source
1000 ^{VDS = 3 V}
I_D – V_GS
100°C
Ta = 25°C
100
-25°C
10
1
0.1
0.01
0
0.5
1
1.5
2
2.5
3
Gate-Source voltage V_GS (V)
R_{DS (ON)} – I_D
200
Common Source
Ta = 25°C
160
120
VGS = 2.5 V
VGS = 4 V
80
40
0
0
1
2
3
4
5
Drain current I_D (A)
R_{DS (ON)} – Ta
250
Common Source
200
150
VGS = 2.5 V, ID = 1.3 A
100
VGS = 4 V, ID = 1.6 A
50
0
-50 -25 0
25 50 75 100 125 150
Ambient temperature Ta (°C)
10
Common Source
VDS = 3 V
Ta = 25°C
|Y_fs| – I_D
1
0.1
0.01
0.1
1
Drain current I_D (A)
1000
C – V_DS
Common Source
VGS = 0
f = 1 MHz
Ta = 25°C
100
Ciss
Coss
Crss
10
10
0.1
1
10
100
Drain-Source voltage V_DS (V)
3
2002-01-24