SSM3J15TE Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications

1000
100
10
1
-1
100
10
1
-0.1
|Yfs| - ID
Common Source
VDS= -3V
Ta=25°C
-10
-100
Drain current ID (mA)
-1000
C - VDS
Common Source
VGS=0V
f=1MHz
Ta=25°C
Ciss
Coss
Crss
-1
-10
Drain-Source voltage VDS (V)
-100
SSM3J15TE
IDR - VDS
-250
Common Source
VGS=0V
-200 _Ta=25°C
-150
-100
-50
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
Drain-Source voltage VDS (V)
10000
1000
toff
tf
t - ID
Common Source
VDD= -5V
VGS=0~-5V
Ta=25°C
100 _ton
tr
10
-0.1
-1
-10
Drain Current ID (mA)
-100
PD - Ta
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta(°C)
4
2007-11-01