SSM3J15TE Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications

Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Symbol
Test Condition
I_GSS
V _{(BR) DSS}
I_DSS
V_th
⎪Y_fs⎪
R_{DS (ON)}
C_iss
C_rss
C_oss
t_on
t_off
V_GS = ±16 V, V_DS = 0
I_D = −0.1 mA, V_GS = 0
V_DS = −30 V, V_GS = 0
V_DS = −3 V, I_D = −0.1 mA
V_DS = −3 V, I_D = −10 mA
I_D = −10 mA, V_GS = −4 V
I_D = −1 mA, V_GS = −2.5 V
V_DS = −3 V, V_GS = 0, f = 1 MHz
V_DD = −5 V, I_D = −10 mA,
V_GS = 0~−5 V
SSM3J15TE
MIN.
⎯
−30
⎯
−1.1
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
TYP.
⎯
⎯
⎯
⎯
⎯
8
14
9.1
3.5
8.6
65
175
MAX.
±1
⎯
−1
−1.7
⎯
12
32
⎯
⎯
⎯
⎯
⎯
UNIT
μA
V
μA
V
mS
Ω
pF
pF
pF
ns
Switching Time Test Circuit
(a) Test circuit
OUT
0
IN
.
−5V
10 μs
V_DD = −5 V
Duty ^<= 1%
V_IN: t_r, t_f < 5 ns
(Z_out = 50 Ω)
Common Source
Ta = 25°C
R_L
V_DD
(b) V_IN
0V
(c) V_OUT
−5 V
V_{DS (ON)}
V_DD
10%
90%
90%
10%
t_r
t_f
t_on
t_off
Precaution
V_th can be expressed as voltage between gate and source when low operating current value is I_D = −100 μA for this
product. For normal switching operation, V_{GS (on)} requires higher voltage than V_th and V_{GS (off)} requires lower voltage
than V_th. (Relationship can be established as follows: V_{GS (off)} < V_th < V_{GS (on)} )
Please take this into consideration for using the device.
2
2007-11-01