SSM3J15TE Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications

SSM3J15TE
ID - VDS
-250
-200
Common Source
Ta=25°C
-10 -7
-5
-4
-150
-100
-50
0
0
-3.3
-3.0
-2.7
-2.5
VGS=-2.3V
-0.5
-1
-1.5
-2
Drain-Source Voltage VDS(V)
-1000
-100
-10
-1
ID - VGS
Common Source
VDS=-3V
Ta=100°C
25°C
-25°C
-0.1
-0.01
0
-1
-2
-3
-4
-5
Gate-Source Voltage VGS(V)
40
30
20
10
0
-1
RDS(ON) - ID
Common Source
Ta=25°C
VGS=-2.5V
-4V
-10
-100
Drain Current ID(mA)
-1000
20
18
16
14
12
10
8
6
4
2
0
0
RDS(ON) - VGS
Source Common
ID= -1mA
Ta=100°C
25°
-25°C
-2
-4
-6
-8
-10
Gate-Source Voltage VGS (V)
RDS(ON) - Ta
30
Common Source
20
VGS=-2.5V,ID=-1mA
10
-4V,-10mA
0
-25
0 25 50 75 100 125 150
Ambient temperature Ta(°C)
Vth - Ta
-2
-1.8
Common Source
ID=-0.1mA
-1.6
VDS=-3V
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
-25 0 25 50 75 100 125 150
Ambient temperature Ta(°C)
3
2007-11-01