SSM3J15TE Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J15TE
High Speed Switching Applications
Analog Switch Applications
SSM3J15TE
• Small package
• Low ON resistance : R_on = 12 Ω (max) (@V_GS = −4 V)
: R_on = 32 Ω (max) (@V_GS = −2.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
V_DS
V_GSS
I_D
I_DP
P_D
T_ch
T_stg
−30
V
±20
V
−100
mA
−200
100
mW
150
°C
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
1: Gate
2: Source
3: Drain
JEDEC
―
JEITA
―
TOSHIBA
2-1B1B
Weight: 0.0022 g(typ.)
Marking
3
Equivalent Circuit (top view)
3
DQ
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01