SSM3J02T Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

SSM3J02T
10000
3000
1000
300
toff
tf
t – I_D
Common Source
VDD = -15 V
VGS = 0 to -2.5 V
RG = 4.7 W
Ta = 25°C
100
ton
30
tr
10
-0.001
-0.01
-0.1
-1
-4
Drain current I_D (A)
Safe operating area
-10
ID max (pulsed)*
ID max (continuous)
-1
1 ms*
10 ms*
1.5
t = 10 s
1.25
1
P_D – Ta
Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t,
Cu Pad: 645 mm²)
0.75 _DC
0.5
0.25
0
0
25
50
75
100
125
150
Ambient temperature Ta (°C)
10 s
DC operation
-0.1
Ta = 25°C
Mounted on FR4 board
-0.01
(25.4 mm ´ 25.4 mm
´ 1.6 t,
Cu Pad:
645
mm²)
*: Single nonrepetitive Pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
-0.001
-0.1
-1
VDSS
max
-10
Drain-Source voltage V_DS (V)
1000
-100
r_th – tw
100
10
1
0.001
0.01
0.1
1
Pulse width tw (s)
Single pulse
Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t,
Cu Pad: 645 mm²)
10
100
1000
4
2002-01-17