SSM3J02T Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
0
I_D – V_DS
-4.0 -2.5
Common Source
-2.2 _{Ta = 25°C}
-2.0
-1.8
-1.6
VGS = -1.4 V
-0.5
-1
-1.5
-2
Drain-source voltage V_DS (V)
SSM3J02T
-10000
Common Source
-1000 ^{VDS = -3 V}
I_D – V_GS
-100
-10
-1
-0.1
Ta = 100°C
25°C
-25°C
-0.01
-0.001
0
-0.5
-1
-1.5
-2
-2.5
-3
Gate-source voltage V_GS (V)
R_{DS (ON)} – I_D
1.5
Common Source
Ta = 25°C
1
VGS = -2.5 V
0.5
-4 V
0
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
Drain current I_D (A)
R_{DS (ON)} – Ta
1
Common Source
ID = -0.3 A
0.8
VGS = -2.5 V
-4 V
0.6
0.4
0.2
0
-50
0
50
100
150
Ambient temperature Ta (°C)
10
Common Source
VDS = -3 V
3 Ta = 25°C
|Y_fs| – I_D
1
0.3
0.1
0.03
0.01
-0.001
-0.01
-0.1
-1
-4
Drain current I_D (A)
C – V_DS
1000
300
Ciss
100
30
Coss
10
Common Source
VGS = 0 V
3 _{f = 1 MHz}
Ta = 25°C
1
-0.1
-1
Crss
-10
-100
Drain-Source voltage V_DS (V)
-400
3
2002-01-17