SSM3J02T Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

SSM3J02T
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Drain-Source breakdown voltage
Drain Cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Note3: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
I_GSS
V_GS = ±10 V, V_DS = 0
¾
¾
±1
mA
V _{(BR) DSS} I_D = -1 mA, V_GS = 0
-30
¾
¾
V
I_DSS
V_DS = -30 V, V_GS = 0
¾
¾
-1
mA
V_th
V_DS = -3 V, I_D = -0.1 mA
-0.6
¾
-1.1
V
|Y_fs|
V_DS = -3 V, I_D = -0.3 A
(Note3) 0.6
¾
¾
S
R_{DS (ON)} ^{ID = -0.3 A, VGS = -4 V}
(Note3) ¾
0.4
0.5
W
I_D = -0.3 A, V_GS = -2.5 V (Note3) ¾
0.55
0.7
C_iss
V_DS = -10 V, V_GS = 0, f = 1 MHz
¾
150
¾
pF
C_rss
V_DS = -10 V, V_GS = 0, f = 1 MHz
¾
21
¾
pF
C_oss
V_DS = -10 V, V_GS = 0, f = 1 MHz
¾
61
¾
pF
t_on
V_DD = -15 V, I_D = -0.3 A,
t_off
V_GS = 0 to -2.5 V, R_G = 4.7 W
¾
55
¾
ns
¾
52
¾
Switching Time Test Circuit
(a) Test circuit
0
IN
OUT
-2.5 V
10 ms
V_IN
V_DD
V_DD = -15 V
R_G = 4.7 W
D.U. ^<= 1%
V_IN: t_r, t_f < 5 ns
COMMON SOURCE
Ta = 25°C
0
(b) V_IN
V_GS
-2.5 V
(c) V_OUT
V_DS
V_{DS (ON)}
V_DD
t_r
t_on
10%
90%
90%
10%
t_f
t_off
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = -100 mA
for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off)
requires lower voltage than Vth.
(relationship can be established as follows: VGS (off) < Vth < VGS (on))
Please take this into consideration for using the device.
VGS recommended voltage of -2.5 V or higher to turn on this product.
2
2002-01-17