SSM3J02T Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J02T
SSM3J02T
Power Management Switch
High Speed Switching Applications
Unit: mm
· Component package suitable for high-density mounting
· Small Package
· Low ON Resistance : Ron = 0.5 Ω (max) (@VGS = −4 V)
: Ron = 0.7 Ω (max) (@VGS = −2.5 V)
· Low-voltage operation possible
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
V_DS
-30
V
V_GSS
±10
V
I_D
-1.5
I_DP
(Note2)
-3.0
A
P_D
(Note1)
1250
mW
T_ch
150
°C
T_stg
-55 to 150
°C
Note1: Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm2, t = 10 s)
Note2: The pulse width limited by max channel temperature.
Marking
Equivalent Circuit
3
3
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 10 mg (typ.)
DD
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2002-01-17