HN1K04FU_07 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type High Speed Switching Applications

(Q1, Q2 common)
3000
1000
500
300
Common
source
VGS = 4 V
Ta = 25°C
V_{DS (ON)} – I_D
100
50
30
10
5
0.5 1
3
10
30
100
Drain current I_D (mA)
P_D* – Ta
350
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
*: TOTAL rating
HN1K04FU
t – I_D
1000
300
toff
tf
ton
100
tr
30 ^{4 V}
0
VIN
10 μs
VIN
10
0.3
1
ID VOUT _D.U. <= _1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common source
VDD = 5 V Ta = 25°C
10
50
Drain current I_D (mA)
4
2007-11-01