HN1K04FU_07 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type High Speed Switching Applications

Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristic
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Symbol
Test Condition
I_GSS
V _{(BR) DSS}
I_DSS
V_th
⎪Y_fs⎪
R_{DS (ON)}
C_iss
C_rss
C_oss
t_on
t_off
V_GS = 10 V, V_DS = 0 V
I_D = 100 μA, V_GS = 0 V
V_DS = 50V, V_GS = 0 V
V_DS = 5V, I_D = 0.1 mA
V_DS = 5V, I_D = 10 mA
I_D = 10 mA, V_GS = 4.0 V
V_DS = 5 V, V_GS=0 V, f = 1 MHz
V_DS = 5 V, V_GS=0 V, f = 1 MHz
V_DS = 5 V, V_GS=0 V, f = 1 MHz
V_DD = 5 V, I_D = 10 mA,
V_GS = 0 to 4.0 V
V_DD = 5 V, I_D = 10 mA,
V_GS = 0 to 4.0 V
Equivalent Circuit (top view)
Marking
HN1K04FU
Min Typ. Max Unit
⎯
⎯
1
μA
50
⎯
⎯
V
⎯
⎯
1
μA
0.8
⎯
2.5
V
20
⎯
⎯
mS
⎯
20
50
Ω
⎯
6.3
⎯
pF
⎯
1.3
⎯
pF
⎯
5.7
⎯
pF
⎯ 0.11 ⎯
μs
⎯ 0.15 ⎯
6
5
4
654
Q1
KH
Q2
1
2
3
(Q1, Q2 common)
Switching Time Test Circuit
(a) Test circuit
4V
IN
10 μs
V_IN
I_D
OUT V_DD = 5 V
D.U. ^<= 1%
V_IN: t_r, t_f < 5 ns
(Z_out = 50 Ω)
V_DD
Common Source
Ta = 25°C
123
(b) V_IN
V_GS
(c) V_OUT
V_DS
4V
0
V_DD
10%
90%
10%
V_{DS (ON)}
90%
t_r
t_f
t_on
t_off
2
2007-11-01