HN1K04FU_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type High Speed Switching Applications

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
HN1K04FU
HN1K04FU
High Speed Switching Applications
Analog Switch Applications
Unit: mm
• High input impedance and extremely low drive current.
• V_th is low and it is possible to drive directly at low-voltage CMOS.
: V_th = 0.8 to 2.5 V
• Switching speed is fast.
• Suitable for high-density mounting because of a compact package.
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
V_DS
50
V
V_GSS
10
V
I_D
50
mA
P_D (Note 1)
200
mW
T_ch
150
°C
T_stg
−55 to 150
°C
JEDEC
JEITA
TOSHIBA
Weight: 6.8 mg
―
―
2-2J1C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: TOTAL rating
1
2007-11-01