HN1K04FU_07 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type High Speed Switching Applications

(Q1, Q2 common)
60
3.0
50 ^4.0
40
I_D – V_DS
Common source
Ta = 25°C
2.7
30
2.4
20
VGS = 2.1 V
10
1.8
1.5
0
2
4
6
8
10
12
Drain-source voltage V_DS (V)
HN1K04FU
I_D – V_DS (low voltage region)
1.2
4.0
2.0
1.0
1.8
Common source
1.7
Ta = 25°C
0.8
1.65
0.6
VGS = 1.6 V
0.4
1.55
0.2
1.5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
Drain-source voltage V_DS (V)
I_DR – V_DS
50
30
Common source
VGS = 0
10
Ta = 25°C
5
D
3
1
G
I_DR
0.5
S
0.3
0.1
0.05
0.03
0.01
0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8
Drain-source voltage V_DS (V)
50
30 _{Ta = 100°C}
10
5
3
I_D – V_GS
Common source
VDS = 5 V
1
0.5
0.3
25
−25
0.1
0.05
0.03
0.01
0 1 234
56 7 8
9
Drain-source voltage V_GS (V)
100
Common
50 ^source
VDS = 5 V
Ta = 25°C
30
⎪Y_fs⎪ – I_D
10
5
3
0.5 1
35
10
30 50 100
Drain current I_D (mA)
100
50
30
10
5
3
1
0.5
0.3
0.1
C – V_DS
Common source
VGS = 0
f = 1 MHz
Ta = 25°C
Ciss
Coss
Crss
0.3 0.5 1
3 5 10
30 50
Drain-source voltage V_DS (V)
3
2007-11-01