2SC6125 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – High-Speed Switching Applications Power Amplifier Applications

2SC6125
V_CE – I_B
1
2
0.1
1
IC = 0.5 A
0.01
0.001
Common emitter
Ta = 25°C
Single pulse test
1
10
100
Base current I_B (mA)
1000
r_th(j-a)－t_w
1000
100
10
1
0.001
0.01
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on an FR4 board
(glass epoxy, 1.6 mm thick, Cu area: 645 mm²)
0.1
1
10
100
1000
Pulse width t_w (s)
Safe Operating Area
100
10 _{IC max (pulsed)*}
I_C max (continuous)
DC operation
Ta=25℃
1
10μs*
100μs*
1ms*
10ms*
100ms*
0.1
0.01
*:Single nonrepetitive pulse Ta = 25°C
Note that the curves for 10ms, 100 ms,
and DC operation will be different when the
devices aren’t mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:645 mm²).
These characteristic curves must be derated
linearly with increase in temperature.
0.01
0.1
1
10
Collector-emitter voltage V_CE (V)
VCEO MAX
100
4
2009-09-24