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2SC6125 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – High-Speed Switching Applications Power Amplifier Applications | |||
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Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cutoff current
Emitter cutoff current
Collector-emitter breakdown voltage
DC current gain
Collector emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
Cob
tr
tstg
tf
VCB = 40 V, IE = 0
VEB = 6 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 0.5 A
VCE = 0.8 V, IC = 2 A
IC = 1.6 A, IB = 53 mA
IC = 1.6 A, IB = 53 mA
VCB = 10 V, IE =0 ,f=1MHz
See Figure 1 circuit diagram
VCC â 12 VãRL = 7.5 Ω
IB1 = IB2 = 53 mA
Figure 1. Switching Time Test Circuit & Timing Chart
20 μs
IB1
IB1
0
Input
IB2
IB2
Duty cycle < 1%
VCC
RL
Output
2SC6125
Min Typ. Max Unit
â¯
â¯
100
nA
â¯
â¯
100
nA
20
â¯
â¯
V
180
â¯
390
100 â¯
â¯
â¯
â¯
0.2
V
â¯
â¯
1.1
V
â¯
18
â¯
pF
â¯
70
â¯
â¯
160
â¯
ns
â¯
15
â¯
Marking
Part No. (or abbreviation code)
4L
Lot No.
Note 4
Note 4: A line beside a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
2
2009-09-24
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