2SC6125 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – High-Speed Switching Applications Power Amplifier Applications

4
20
3
I_C – V_CE
15
12
10
8
2
6
4
1
Common emitter
IB=2mA
Ta = 25°C
Single pulse test
0
0
2
4
6
8
10
12
Collector-emitter voltage V_CE (V)
2SC6125
1000
25
100
h_FE－I_C
Ta =100 °C
−55
Common emitter
V_CE = 0.8 V
Single pulse test
10
0.001
0.01
0.1
1
10
Collector current I_C (A)
1000
25℃
100
h_FE－I_C
Ta=100℃
−55℃
Common emitter
V_CE = 2 V
Single pulse test
10
0.001
0.01
0.1
1
10
Collector current I_C (A)
V_{CE (sat)} – I_C
1.0
Common emitter
I_C/I_B = 30
Single pulse test
Ta=100℃
0.1
25℃
−55℃
0.01
0.001
0.01
0.1
1
10
Collector current I_C (A)
V_{BE (sat)} – I_C
10
Common emitter
I_C/I_B = 30
Single pulse test
1
25℃
−55℃
Ta=100℃
0.1
0.001
0.01
0.1
1
10
Collector current I_C (A)
I_C – V_BE
4
Common emitter
V_CE = 2 V
Single pulse test
3
2
Ta=100℃
25℃
1
−55℃
0
0
0.4
0.8
1.2
1.6
Base-emitter voltage V_BE (V)
3
2009-09-24