2SC6125 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Speed Switching Applications Power Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6125
2SC6125
High-Speed Switching Applications
Power Amplifier Applications
Unit : mm
• High DC current gain: h_FE = 180 to 390 (I_C = 0.5 A)
• Low collector-emitter saturation: V_{CE (sat)} = 0.2 V (max)
• High-speed switching: t_f = 15 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
(Note 1)
Base current
Collector power dissipation
(Note 2)
Junction temperature
Storage temperature range
DC
Pulse
DC
t = 10 s
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
PC
PC
T_j
T_stg
Rating
40
20
6
4
7
0.4
1
2.5
150
−55 to 150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm²)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-09-24